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ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m PD = 1.25W Complementary part number ZXTN25060BFH typical; VCE(sat) < -85mV @ -1A ; Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * * Higher power dissipation SOT23 package High peak current Low saturation voltage 100V forward blocking voltage 7V reverse blocking voltage E E C B Pinout - top view Applications * * * MOSFET gate drivers Power switches Motor control Ordering information Device ZXTP25060BFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000 Device marking 028 Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP25060BFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at TA =25C (a) Linear derating factor Power dissipation at TA =25C (b) Linear derating factor Power dissipation at TA =25C (c) Linear derating factor Power dissipation at TA =25C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit -100 -100 -60 -7 -7 -3 -9 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C PD PD PD Tj, Tstg Thermal resistance Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP25060BFH Characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP25060BFH Electrical characteristics (at TAMB = 25C unless otherwise stated) Parameter Symbol Min. -100 -100 Typ. -120 -120 Max. Unit V V Conditions IC = -100mA IC = -100mA, RBE < 1k or -0.25V < VBE < 1V IC = -10mA (*) Collector-base breakdown BVCBO voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Collector emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage BVCEX, BVCEO -60 -80 V BVECO -7 -8.6 V IE = -100uA (*) BVEBO ICBO ICEX -7 -8.1 <-1 -50 -20 -100 V nA A nA IE = -100mA VCB = -80V VCB = -80V, TAMB= 100C VCE = -80V; RBE < 1k or -0.25V < VBE < 1V VEB = -5.6V IC = -0.5A, IB = -50mA (*) IC = -0.5A, IB = -10mA (*) IC = -1A, IB = -100mA (*) IC = -3A, IB = -300mA (*) IC = -3A, IB = -300mA (*) IC = -3A, VCE = -2V (*) IC = -10mA, VCE = -2V (*) IC = -1A, VCE = -2V (*) IC = -3A, VCE = -2V (*) IEBO VCE(sat) <-1 -45 -100 -70 -175 -50 -55 -135 -85 -235 -1040 -930 300 nA mV mV mV mV mV mV Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 100 75 30 -940 -830 200 150 60 250 17.6 26.5 291 Transition frequency Output capacitance Turn-on time Turn-off time fT COBO t(on) t(off) MHz 30 pF ns ns 2%. IC = -100mA, VCE = -5V f = 100MHz VCB = -10V, f = 1MHz (*) VCC = -10V. IC = -500mA, IB1 = IB2= -50mA. NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP25060BFH Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP25060BFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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